Pulsed write techniques for magneto-resistive memories

ABSTRACT

A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

CROSS-REFERENCE TO RELATED CO-PENDING APPLICATIONS

This Application is related to U.S. Pat. No. 6,269,027 issued Jul. 31,2001, and entitled “NON-VOLATILE STORAGE LATCH”, U.S. Pat. No. 6,175,525issued Jan. 16, 2001, and entitled “NON-VOLATILE STORAGE LATCH” and U.S.Pat. No. 6,147,922 issued Nov. 14, 2000, and entitled “NON-VOLATILESTORAGE LATCH”, all of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to ferromagnetic thin film memories and,more particularly, to ferromagnetic thin film memories in which statesof the memory cells based on magnetization direction are determinedthrough magnetoresistive properties of the thin film sensed by anelectronic circuit.

Digital memories of various kinds are used extensively in computers andcomputer system components, in digital processing systems, and the like.Such memories can be formed, to considerable advantage, based on thestorage of digital bits as alternative states of magnetization inmagnetic materials in each memory cell, typically thin film materials.These films may be ferromagnetic thin films having information storedtherein through the direction of the magnetization occurring in thatfilm, with this information being obtained through either inductivesensing to determine the magnetization state, or by magnetoresistivesensing of such states. Such ferromagnetic thin film memories may beconveniently provided on the surface of a monolithic integrated circuitto provide easy electrical interconnection between the memory cells andthe memory operating circuitry.

Ferromagnetic thin film memory cells can be made very small and packedvery closely together to achieve a significant density of stored digitalbits, properties which permit them to be provided on the surface of amonolithic integrated circuit as indicated above. One construction, asan example, is shown in FIG. 1, where a bit structure 10 for a memorycell that is presented is formed over a semiconductor material body 12,as used in a monolithic integrated circuit, and directly on aninsulating layer 13, itself supported on a major surface of body 12 inthe integrated circuit. Only a small portion of the integrated circuitis shown, and then only a small portion of the semiconductor body isshown in that integrated circuit portion.

These bit structures in an assemblage in a memory are usually providedin a series string of such bit structures often called sense lines.There are typically a plurality of such sense lines in a memory. Inorder to make interconnections between members of such sense lines, orbetween the sense lines and the external circuitry in the integratedcircuit for operating the memory, terminal regions or junctures 14 aretypically provided at each end of the bit structure for interconnectionpurposes. These interconnections might be formed of copper alloyed inaluminum.

The remainder of the bit structure disposed on the exposed major surfaceof insulating layer 13 includes a lower ferromagnetic thin film 15 andan upper ferromagnetic thin film 16. Ferromagnetic thin film layers 15and 16 typically exhibit uniaxial anisotropy, magnetoresistance, littlemagnetostriction, and are of an alloy composition typically comprisingnickel, cobalt and iron. The magnetic device structure can be a spinvalve that includes a pinned reference layer 15 spaced apart from a“free layer” that stores the digital information. The lowerferromagnetic thin film 15 is typically, but not always, thicker thanthe upper ferromagnetic thin film 16. Alternatively, a pseudo-spin-valvestructure can be used where the lower ferromagnetic thin film 15 isoften called the hard layer, and the upper ferromagnetic thin film 16 isoften called the soft layer.

Between ferromagnetic thin film layers 15 and 16 is typically a furtherthin layer 17 which usually would not exhibit ferromagnetism but may beeither an electrical conductor or an electrical insulator. Layer 17must, however, in this construction, minimize the exchange interactionbetween layers 15 and 16 so that the magnetization vectors of each layerare decoupled. A typical choice for layer 17 would be copper. Aninsulating layer 18 covers bit structure 10 although only a part of itis shown in FIG. 1.

Finally, a word line 19 is shown in FIG. 1 disposed on the major surfaceof insulating layer 18. Word line 19 typically includes an aluminumlayer alloyed with copper on a titanium-tungsten base layer. Aprotective and insulating layer over the entire structure of FIG. 1 isoften used in practice, but is not shown here.

Bit structure 10 can be operated in a longitudinal mode having its easyaxis extend between internal interconnections 14 perpendicular to thedirection of word line 19. Information kept as a digital bit having oneof two alternative logic values in bit structure 10 is stored therein inlayer 15 by having the magnetization vector point in one direction orthe other, generally along the easy axis of magnetization. If thedirection of magnetization is caused to rotate from such a direction byexternal magnetic fields, the electrical resistance of layers 15 and 16changes with this magnetization direction rotation because of themagnetoresistive properties of such layers. For the kinds of materialstypically used in layers 15 and 16, the maximum change in resistance ison the order of a few percent of the minimum resistance value.

Sense current refers to the current flow through bit structure 10 fromone terminal 14 to the other terminal 14 thereof, and word currentrefers to current flowing in word line 19 adjacent to, and transverse tothe orientation of, bit structure 10. Bit structure 10 can be placed inone of the two possible magnetization states of layer 15 (pinned layer)through the selective application of sense and word currents i.e.,information can be “written” in bit structure 10. A bit structure 10 ofa typical configuration can be placed in a “0” magnetization state bythe application of a sense current of typically 1.0 mA, andcoincidentally with the provision of a word current in one directionfrom 20 mA to 40 mA. The opposite magnetization state representing a “1”logic value can be provided through providing the same sense current anda word current of the same magnitude in the opposite direction. Suchstates typically occur fairly quickly after the proper current levelsare reached, such state changes typically occurring in less than about 5ns.

Determining which magnetization state is stored in bit structure 10i.e., reading the information stored in bit structure 10, is typicallydone by providing externally caused magnetic fields in that bitstructure, through providing, for example, wordline currents andsometimes coincident sense line currents. These currents rotate themagnetization of the upper ferromagnetic thin film 16 (free layer) ofthe bit structure 10, but preferably not the lower ferromagnetic thinfilm 15 (pinned layer). As indicated above, this causes a change in theelectrical resistance encountered between terminal regions 14 in bitstructure 10 for different magnetization directions in the structure,including changing from one easy axis direction magnetization state tothe opposite direction state. As a result, there is detectabledifferences in the voltage developed across magnetic bit structure 10 bythe sense current flowing therethrough, depending on the relativemagnetization direction of the pinned and free layers of bit structure10.

As the size of the bit structure 10 decreases, the magnetic fieldrequired to rotate the upper ferromagnetic thin film 16 and the lowerferromagnetic thin film 15 also tend to increase. Accordingly, themagnitude of the word line currents and sense lines currents increase.Depending on the technology used, this may cause the electro-migrationlimits of the metal interconnect layers to be exceeded. To helpcompensate for this, a digital line is sometimes provided over the bitstructure 10 parallel with the sense line. The digital line provides anadditional metal layer for carrying the required current, and providesadditional lateral torque at the bit structure 10.

A limitation of many prior art magneto-resistive memories is that bothsense lines and word lines are separately provided. Each of the senselines and word lines typically requires a separate and often relativelylarge driver, which can result in significant peripheral overhead. Thisperipheral overhead often decreases the overall density of the memoryand increases the overall power, both of which are undesirable.

SUMMARY OF THE INVENTION

The present invention overcomes many of the disadvantages of the priorart by providing a magneto-resistive memory that has a shared word lineand sense line. By providing a shared word line and sense line, thenumber of relatively large drivers required to drive the word line andsense line currents may be reduced. This may reduce the peripheraloverhead of the memory, and may increase the overall density and reducethe overall power of the memory.

In accordance with one illustrative embodiment of the present invention,a word line is provided adjacent a magneto-resistive bit. Rather thanproviding a separate sense line that interconnects the bit ends of themagneto-resistive bit to adjacent bits, one end of the magneto-resistivebit is connected to the word line and the other end is connected to apredetermined voltage such as ground through a switch or the like. Theswitch, which is preferably a transistor, selectively provides a pathfor a sense current to flow from the word line, through at least part ofthe magneto-resistive bit, and to the predetermined voltage.Accordingly, the word line may deliver both the word line current andthe sense line current for the magneto-resistive bit. As such, noseparate sense line current driver is required. Instead, a relativelysmall buffer or the like may be used to activate the switch, which thendraws the sense line current from the word line.

Preferably, the magneto-resistive bit is elongated and has a length anda width. The magnetization vector of the pinned layer of themagneto-resistive bit preferably remains in a predetermined direction.Thus, the magneto-resistive bit may be written to a desiredmagneto-resistive state by changing the magnetization vector of only thefree layer. The word line carries a word line current that produces aword line magnetic field component along the length of the elongatedmagneto-resistive bit. The word line magnetic field component providesthe longitudinal force for switching the magnetization vector of thefree layer of the magneto-resistive bit. The sense current, which passesthrough at least part of the magneto-resistive bit, preferably producesa sense magnetic field component that extends along the width of theelongated magneto-resistive bit. The sense magnetic field componentprovides the lateral torque sometimes necessary to initiate the rotationof the magnetization vector of the free layer of the magneto-resistivebit. A digital line may also be provided adjacent the magneto-resistivebit to provide additional lateral torque, if desired.

During a write operation, a word line current is provided to the wordline, and the switch is activated. The switch draws a write sensecurrent from the word line and through the magneto-resistive bit. Themagnetic fields produced by the word line current and the write sensecurrent are preferably sufficient to write the free layer of themagneto-resistive bit to the desired magneto-resistive state.

During a read operation, a word line current is not provided. Instead, aread circuit provides a path for a read sense current to flow to theword line. The switch is again activated, which draws the read sensecurrent through the magneto-resistive bit. The read circuit senses theresistive state of the magneto-resistive bit by sensing the magnitude ofthe read sense current or by sensing the voltage drop across themagneto-resistive bit.

During a write operation, it is desirable to limit the magnitude of thewrite sense current so that the magnetic bit is not damaged by thecurrent. During a read operation, it is desirable to reduce theresistance that is in series with the magneto-resistive bit to maximizethe sensitivity to the resistance change of the GMR bits. Accordingly,it is contemplated that the switch may have at least two resistive modesincluding an intermediate resistive mode and a lower resistive mode. Theintermediate resistance mode may provide a limiting resistance in serieswith the magneto-resistive bit to limit the amount of write sensecurrent that is drawn from the word line during a write operation. Thelower resistance mode may be used to reduce the resistance that is inseries with the magneto-resistive bit during a read operation tomaximize the sensitivity of the read operation.

When the switch includes a transistor, the intermediate resistive modemay be provided by operating the transistor in the saturation region,where the current flowing through the transistor is controlled by thevoltage on the gate of the transistor. By providing an appropriatevoltage to the gate of the transistor, the desired write sense currentcan be provided. The lower resistance mode may be provided by operatingthe transistor in the linear region, with the transistor fully turnedon.

It is contemplated that the switch may also have a higher resistive modefor substantially preventing the write sense current and the read sensecurrent from flowing from the word line. This higher resistance mode mayallow the magneto-resistive bit to be deselected, which may beparticularly important when multiple magneto-resistive bits arecontrolled by the same word line.

To provide a differential magneto-resistive output signal, it iscontemplated that a magneto-resistive storage element may be providedthat includes two magneto-resistive bits. In this illustrativeembodiment, the word line may extend adjacent the first and secondmagneto-resistive bits. The word line may be connected to the first endof the first magneto-resistive bit and the first end of the secondmagneto-resistive bit. The word line preferably extends adjacent thefirst magneto-resistive bit in a first direction and adjacent the secondmagneto-resistive bit in a second opposite direction. This may provide aword line magnetic field component that extends toward one end of thefirst magneto-resistive bit and toward the other end of the secondmagneto-resistive bit. Since the magnetization vector of the pinnedlayer of the first and second magneto-resistive bits preferably are inthe same direction, this configuration causes the first and secondmagneto-resistive bits to be written into opposite magneto-resistivestates.

As above, a switch is preferably coupled to the second end of the firstmagneto-resistive bit and the second end of the second magneto-resistivebit. The switch selectively provides a path for a write sense currentand a read sense current to flow from the word line, through at leastpart of the first and second magneto-resistive bits, and to apredetermined voltage such as ground. The switch preferably has at leasttwo resistive states including an intermediate resistive state and alower resistive state.

During a write operation, a word line current is provided to the wordline. The word line current provides a write magnetic field componenttoward one end of the first magneto-resistive bit and toward the otherend of the second magneto-resistive bit. When the switch is activated,the write sense current is drawn from the word line current and throughthe first and second magneto-resistive bits. This causes the firstmagneto-resistive bit to be written to a first resistive state and thesecond magneto-resistive bit to a second opposite resistive state.

During a read operation, the word line is preferably divided into afirst word line and a second word line, with the first word lineextending adjacent the first magneto-resistive bit and the second wordline extending adjacent the second magneto-resistive bit. This may beaccomplished by providing a word line switch between the first word lineand the second word line. The word line switch may be activated toconnect the first word line and the second word line during a writeoperation, and may be deactivated to effectively disconnect the firstword line from the second word line during a read operation.

It is recognized that in some embodiments, a word line switch may not beneeded. For example, the first word line and the second word line mayalways be separated, even during a write operation. In this embodiment,the word line current does not traverse from the first word line to thesecond word line. Instead, a first word line current may be provided tothe first word line, and a second word line current may be provided tothe second word line. The polarity of the first and second word linecurrents may then be adjusted so that the first magneto-resistive bitand the second magneto-resistive bit are written into opposite resistivestates.

A read circuit is preferably coupled to the first word line and thesecond word line. The read circuit provides a path for a first readsense current to the first word fine and a second read sense current tothe second word line. The first read sense current and the second readsense current are preferably substantially identical. The switch orswitches in the magneto-resistive element are activated to draw thefirst read sense current through the first magneto-resistive bit and thesecond read sense current through the second magneto-resistive bit. Theread circuit senses the resistive state of the magneto-resistive bits bysensing the difference between the first read sense current and thesecond read sense current, or the differential voltage at the first endsof the first and second magneto-resistive bits.

It is contemplated that the read circuit may include a latch circuitsimilar to that shown in co-pending U.S. patent application Ser. No.09/059,871, filed Apr. 14, 1998, and entitled “NON-VOLATILE STORAGELATCH”, U.S. patent application Ser. No. 09/396,189, filed Sep. 14, 1999and entitled “NON-VOLATILE STORAGE LATCH”, and U.S. patent applicationSer. No. 09/059,871, filed Apr. 14, 1998, and entitled “NON-VOLATILESTORAGE LATCH”, all of which are incorporated herein by reference. Morespecifically, the read circuit may include a latch circuit that includesa first inverter and a second inverter coupled together in across-coupled configuration. The latch circuit preferably also includesa load transistor coupled between the input terminals of the first andsecond inverters. The load transistor is used to load the state on thenegative supply terminals of the first and second inverters into thelatch circuit.

In accordance with this embodiment of the present invention, the firstword line may be coupled to the negative supply terminal of the firstinverter, and the second word line may be coupled to the negative supplyterminal of the second inverter. The first end of the firstmagneto-resistive bit is preferably coupled to the negative supplyterminal of the first inverter via the first word line, and the firstend of the second magneto-resistive bit is preferably coupled to thenegative supply terminal of the second inverter via the second wordline. During a read operation, the second ends of the first and secondmagneto-resistive bits are preferably coupled to ground via a switch orthe like, as described above.

In this configuration, when the load transistor of the read circuit isactivated, identical sense line currents are provided to the first wordline and the second word line via the negative supply terminals of thefirst and second inverters. With the switch enabled, the first andsecond read sense line currents pass through the first and secondmagneto-resistive bits, respectively. Since the first and secondmagneto-resistive bits are in opposite resistive states, the voltage atthe negative supply terminals of the latch circuit is not equal. Thus,when the load transistor is deactivated, the latch circuit assumes thestate that corresponds to the voltage differential between the negativesupply terminals of the first and second inverters. This statecorresponds to the resistive state of the magneto-resistive bits.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects of the present invention and many of the attendantadvantages of the present invention will be readily appreciated as thesame becomes better understood by reference to the following detaileddescription when considered in connection with the accompanyingdrawings, in which like reference numerals designate like partsthroughout the figures thereof and wherein:

FIG. 1 is a partial cut-away perspective view of a prior artmagneto-resistive memory;

FIG. 2 is a graph showing illustrative minor loops of amagneto-resistive bit as a function of the write sense current;

FIG. 3 is a schematic diagram showing an illustrative magneto-resistivememory having a shared word line and sense line;

FIG. 4 is a schematic diagram showing a preferred magneto-resistivememory having shared word lines and sense lines;

FIG. 5 is a timing diagram showing illustrative write and readoperations of the magneto-resistive memory of FIG. 4;

FIG. 6 is a partial cross-sectional side view of an illustrativemagneto-resistive memory element in accordance with the presentinvention; and

FIG. 7 is a partial cross-sectional side view of yet anotherillustrative magneto-resistive memory element in accordance with thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 2 is a graph showing a number of illustrative minor loops of a GMRmagneto-resistive bit as a function of write sense current. The x-axisof the graph illustrates the applied easy axis magnetic field, which inthe example shown, corresponds to the word line magnetic field componentthat extends along the length of the magneto-resistive bit. The y-axisof the graph illustrates the corresponding resistance of themagneto-resistive bit assuming the magnetic field vector 39 of thepinned layer of the magneto-resistive bit remains pointing to the left,as shown.

At point A, the magnetization vector 38 a of the free layer and themagnetization vector 39 of the pinned layer point to the left, which inthe example shown, corresponds to a negative word line magnetic field.During a write operation, the word line magnetic field is first reducedto zero, which corresponds to point B. During this transition, themagneto-resistive state of the magneto-resistive bit does not change.The word line magnetic field is then increased in a positive directionto point C. As the word line magnetic field increases beyond point C,the magnetization vector of the free layer switches state, resulting ina higher bit resistance as indicated at point D. In this state, themagnetization vector 38 b of the pinned layer points to the right.

To return the magneto-resistive bit to its original state, the word linemagnetic field is again reduced to zero, which corresponds to point E,and is then increased in a negative direction to point F. As the wordline magnetic field increases beyond point F, the magnetization vectorof the free layer again switches state, resulting in a lower bitresistance as indicated at point A. In this state, the magnetizationvector 38 a of the free layer points to the left, as shown.

An increase in the magnitude of the sense line magnetic field can oftenreduce the word line magnetic field that is required to switch the stateof the free layer of the magneto-resistive bit. Minor loop 40, whichcorresponds to the smallest sense line magnetic field present, requiresthe highest word line magnetic field to switch the state of the freelayer. Minor loops 42, 44 and 46, which have increasingly larger senseline magnetic fields, require increasingly smaller word line magneticfields to switch the state of the free layer. This phenomenon can oftenbe used to provide selectivity to a memory, and no digital line may berequired.

To further illustrate the selectivity that can often be provided by thesense line current, a specific word line magnetic field (and thus aspecific word line current) is shown at 50. Those magneto-resistive bitsthat have an insufficient sense line magnetic field, such as thosecorresponding to minor loops 40 and 42, will not be written. However,those magneto-resistive bits that have a sense line magnetic field thatis greater than a threshold level, such as those corresponding to minorloops 44 and 46, will be written. Accordingly, it is contemplated thatthe present invention may provide the desired selectivity using only asense line, and may not require a digital line. However, it iscontemplated that a digital line may be provided, if desired.

FIG. 3 is a schematic diagram showing an illustrative magneto-resistivememory having a shared word line and sense line. The illustrativemagneto-resistive memory is generally shown at 60 and includes a wordline 62, a magneto-resistive bit 64, a switch 66 and a read block 68.

The word line 62 is provided adjacent the magneto-resistive bit 64 toprovide a word line magnetic field at the magneto-resistive bit.Preferably, the word line 62 extends over or under the magneto-resistivebit, as further shown in FIGS. 6-8 below. One end 70 of themagneto-resistive bit 64 is preferably connected to the word line 62,and the other end 72 is preferably connected to a predetermined voltage74 such as ground through switch 66. The switch 66, which is preferablya transistor, selectively provides a path for a sense current to flowfrom the word line 62, through at least part of the magneto-resistivebit 64, and to the predetermined voltage 74. Accordingly, the word line62 may deliver both the word line current and the sense line current forthe magneto-resistive bit 64. As such, no separate sense line currentdriver may be required. Instead, a relatively small buffer or the likemay be used to control the switch 66 via the switch control terminal 76.

Preferably, the magneto-resistive bit 64 is elongated and has a lengthand a width. The word line 62 carries a word line current that producesa word line magnetic field component along the length of the elongatedmagneto-resistive bit 64. The word line magnetic field componentprovides the longitudinal force for switching the magnetization vectorof the free layer of the magneto-resistive bit 64. The sense current,which passes through at least part of the magneto-resistive bit 64,preferably produces a sense magnetic field component that extends alongthe width of the elongated magneto-resistive bit 64. The sense magneticfield component provides the lateral torque sometimes necessary toinitiate the rotation of the magnetization vector of the free layer ofthe magneto-resistive bit 64. A digital line (not shown) may also beprovided adjacent the magneto-resistive bit 64 to provide additionallateral torque, if desired.

During a write operation, a word line current is provided to the wordline 64 via word current terminal 80. The switch 66 is then activatedvia the switch control terminal 76, which draws a write sense currentfrom the word line 62 and through the magneto-resistive bit 64. Themagnetic fields produced by the word line current and the write sensecurrent write the free layer of the magneto-resistive bit 64 to thedesired magneto-resistive state. The read block 68 is preferablydisabled to prevent any read sense currents from being provided to theword line 64.

During a read operation, the word line current is preferably notprovided. Instead, the read block 68 provides a path for a read sensecurrent to flow to the word line 62. The switch 66 is then activated,which draws a read sense current through the magneto-resistive bit 64.The read block 68 senses the resistive state of the magneto-resistivebit 64 by sensing the magnitude of the read sense current or by sensingthe voltage drop across the magneto-resistive bit 64.

During a write operation, it is desirable to limit the magnitude of thewrite sense current so that sufficient word line current remains toeffectively write the free layer of the magneto-resistive bit 64. Incontrast, and during a read operation, it is desirable to reduce theresistance that is in series with the magneto-resistive bit 64 tomaximize the sensitivity of the read operation. Accordingly, it iscontemplated that the switch 66 may have at least two resistive modesincluding an intermediate resistive mode and a lower resistive mode. Theintermediate resistance mode may provide a limiting resistance in serieswith the magneto-resistive bit 64 to limit the amount of write sensecurrent that is drawn from the word line 62 during a write operation.The lower resistance mode may be used to reduce the resistance that isin series with the magneto-resistive bit 64 during a read operation tomaximize the sensitivity of the read operation.

When switch 66 includes a transistor as shown, the intermediateresistive mode may be provided by operating the transistor in thesaturation region, where the current flowing through the transistor iscontrolled by the voltage on the gate of the transistor (e.g., at theswitch control terminal 76). By providing an appropriate voltage to thegate of the transistor, the desired write sense current can be provided.The lower resistance mode may be provided by operating the transistor inthe linear region, with the transistor fully turned on.

It is contemplated that the switch 66 may further have a higherresistive mode for substantially preventing the write sense current andthe read sense current from flowing from the word line 62. This higherresistance mode may allow the magneto-resistive bit 64 to be deselected,which may be particularly important when other magneto-resistive bits(see FIG. 4) are controlled by the same word line 62.

FIG. 4 is a schematic diagram showing a preferred magneto-resistivememory having shared word lines and sense lines. The magneto-resistivememory is generally shown at 100, and includes a number ofmagneto-resistive memory elements 102 a-f, a number of read circuits 104a and 104 b, a number of word lines 106 a-d, a number of word lineswitches 108 a and 108 b and a controller 110.

The memory architecture includes a number of columns and a number ofrows. Each of the columns correspond to one of the read circuits 104 aand 104 b. During a write operation, a desired column can be selected byproviding a word line current to the word lines that correspond to thedesired column of magneto-resistive bits. For example, to select thecolumn that includes read circuit 104 a, a word line current may beprovided to word lines 106 a and 106 b via write current-1 terminals114. Likewise, to select the column that includes read circuit 104 b, aword line current may be provided to word lines 106 c and 106 d viawrite current-N terminals 116.

During a read operation, the desired column can be selected by assertingthe load terminal of the corresponding read circuit. For example, toselect the column that includes read circuit 104 a, the load-1 terminal120 of read circuit 104 a may be asserted. Likewise, to select thecolumn that includes read circuit 104 b, the load-N terminal 122 of readcircuit 104 b may be asserted. An advantage of this embodiment is that adifferential magneto-resistive output signal is provided to the readcircuits 104 a and 104 b, thereby potentially increasing thesignal-to-noise ratio of the memory.

Each of the magneto-resistive storage elements 102 a-f preferablyinclude two magneto-resistive bits. The magnetization vector of thepinned layer of each of the magneto-resistive bits preferably remains ina common direction, such as pointing to the left. For clarity, theoperation of magneto-resistive storage element 102 a is described indetail. The remaining magneto-resistive storage elements 102 b-f operatein a similar manner.

Magneto-resistive storage element 102 a includes magneto-resistive bits112 a and 112 b. Word line 106 a extends adjacent the firstmagneto-resistive bit 112 a, and word line 106 b extends adjacentmagneto-resistive bit 112 b. Word line 106 a is connected to the firstend 124 of the first magneto-resistive bit 112 a, and word line 106 b isconnected to the first end 126 of the second magneto-resistive bit 112b. Word lines 106 a and 106 b can be selectively connected via word lineswitch 108 a during a write operation so that the word line currenttravels past the first magneto-resistive bit 112 a in a first direction(e.g., downward), and past the second magneto-resistive bit 112 b in asecond opposite direction (e.g., upward). If word lines 106 a and 106 bare positioned above the first and second magneto-resistive bits 112 aand 112 b, respectively, the word line current produces a word linemagnetic field component that extends to the right in the firstmagneto-resistive bit 112 a and to the left in the secondmagneto-resistive bit 112 b. Since the pinned layer of the first andsecond magneto-resistive bits 112 a and 112 b both preferably point in acommon direction such as to the left, the first and secondmagneto-resistive bits 112 a and 112 b may be written into oppositemagneto-resistive states.

Preferably, a switch is coupled to the second end 130 of the firstmagneto-resistive bit 112 a and the second end 132 of the secondmagneto-resistive bit 112 b. In the embodiment shown, the switchincludes two identical transistors, each having a gate coupled to aselect line, such as select-1 line 130. The switch may selectivelyprovide a path for a write sense current and a read sense current toflow from the word lines 106 a and 106 b, through at least part of thefirst and second magneto-resistive bits 112 a and 112 b, and to apredetermined voltage such as ground. The switch preferably has at leasttwo resistive states including an intermediate resistive state and alower resistive state.

During a write operation, a word line current is provided, for example,down word line 106 a, through write switch 108 a, and up word line 106b. As indicated above, such a word line current produces a writemagnetic field component that points to the right in the firstmagneto-resistive bit 112 a and to the left in the secondmagneto-resistive bit 112 b. When the switch is activated, a write sensecurrent is drawn from the word line current and through the first andsecond magneto-resistive bits 112 a and 112 b. This causes the firstmagneto-resistive bit 112 a to be written to a first resistive state andthe second magneto-resistive bit 112 b to a second opposite resistivestate. Preferably, the read circuit 104 a is disabled to prevent anyread sense currents from being provided to word line 64.

During a read operation, the word line is preferably divided into afirst word line 106 a and a second word line 106 b, with the first wordline 106 a extending adjacent the first magneto-resistive bit 112 a andthe second word line 106 b extending adjacent the secondmagneto-resistive bit 112 b. This is preferably accomplished byproviding a word line switch 108 a between the first word line 106 a andthe second word line 106 b. The word line switch 106 a may be activatedto connect the first word line 106 a and the second word line 106 bduring a write operation, and may be deactivated to effectivelydisconnect the first word line 106 a from the second word line 106 bduring a read operation.

The read circuit 104 a is preferably coupled to the first word line 106a and the second word line 106 b. The read circuit 104 a provides a pathfor a first read sense current to the first word line 106 a and a secondread sense current to the second word line 106 b. The switch or switchesin the magneto-resistive element are then activated to draw the firstread sense current through the first magneto-resistive bit 112 a and thesecond read sense current through the second magneto-resistive bit 112b. The read circuit 104 a may sense the resistive state of themagneto-resistive bits 112 a and 112 b by sensing the difference betweenthe first read sense current and the second read sense current.Alternatively, the read circuit 104 a may sense the resistive state ofthe magneto-resistive bits 112 a and 112 b by sensing the differentialvoltage between the first ends 124 and 126 of the first and secondmagneto-resistive bits 112 a and 112 b, respectively.

It is contemplated that the read circuit 104 a may include a latchcircuit similar to that shown in co-pending U.S. patent application Ser.No. 09/059,871, filed Apr. 14, 1998, and entitled “NON-VOLATILE STORAGELATCH”, U.S. patent application Ser. No. 09/396,189, filed Sep. 14,1999, and entitled “NON-VOLATILE STORAGE LATCH”, and U.S. patentapplication Ser. No. 09/059,871, filed Apr. 14, 1998, and entitled“NON-VOLATILE STORAGE LATCH”, all of which are incorporated herein byreference. More specifically, the read circuit 104 a may include a latchcircuit that includes a first inverter 140 and a second inverter 142coupled together in a cross-coupled configuration. The latch circuitpreferably also includes a load transistor 144 coupled between the inputterminals of the first and second inverters. The load transistor 144 isused to load the state that corresponds to the voltage difference on thenegative supply terminals 146 and 148 of the first and second inverters140 and 142, respectively, into the latch circuit.

The first word line 106 a is coupled to the negative supply terminal 146of the first inverter 140, and the second word line 106 b is coupled tothe negative supply terminal 148 of the second inverter 142. The firstend 124 of the first magneto-resistive bit 112 a is preferably coupledto the negative supply terminal 146 of the first inverter 140 via thefirst word line 106 a, and the first end 126 of the secondmagneto-resistive bit 112 b is preferably coupled to the negative supplyterminal 148 of the second inverter 142 via the second word line 106 b.During a read operation, the second ends 124 and 126 of the first andsecond magneto-resistive bits 112 a and 112 b, respectively, are coupledto ground via the switch or the like, as described above.

In this configuration, when the load transistor 144 of the read circuit104 a is activated, identical sense line currents are provided to thefirst word line 106 a and the second word line 106 b via the negativesupply terminals 146 and 148 of the first and second inverters 140 and142. With the switch in the magneto-resistive element 102 a enabled viaselect-1 terminal 130, the first and second sense line currents passthrough the first and second magneto-resistive bits 112 a and 112 b,respectively. Since the first and second magneto-resistive bits 112 aand 112 b are in opposite resistive states, the voltages at the negativesupply terminals 146 and 148 of the latch circuit are not equal. Thus,when the load transistor 144 is deactivated, the latch circuit willassume the state that corresponds to the voltage differential betweenthe negative supply terminals 146 and 148 of the first and secondinverters 140 and 142. This state corresponds to the resistive state ofthe magneto-resistive bits 112 a and 112 b.

A controller 110 is preferably provided for controlling the variousterminals including the write current-1 terminals 114, the selectterminals such as select-1 terminal 130, the write-1 terminal, theload-1 terminal 120, the write current-N terminals 116, the write-Nterminal, the load-N terminal 122, etc.

FIG. 5 is a timing diagram showing illustrative write and readoperations of the magneto-resistive memory of FIG. 4. The timing diagramis divided into six regions including regions 180, 182, 184, 186, 188and 190. Region 180 shows a write operation that writes a “1” tomagneto-resistive memory element 102 a. The illustrative write operationbegins with all control terminals deselected. These control terminalsinclude write current-1 terminals 114, write current-N terminals 116,write-1 terminal 200, write-N terminal 202, select-1 terminal 130,select-2 terminal 204, select-N terminal 208, load-1 terminal 120, andload-N terminal 122.

The write current-1 terminals 114 are asserted to provide a positivewrite current pulse 210 to word lines 106 a and 106 b. The write-1terminal 200 is also asserted as shown at 212, which closes the wordline switch 108 a and connects word lines 106 a and 106 b as shown. Theword line current provided to write current-1 terminals 114 thus passesdown word line 106 a, through word line switch 108 a, and up word line106 b. To select magneto-resistive memory element 102 a, the select-1terminal 130 is asserted as shown at 214. This turns on the switchtransistors in magneto-resistive memory element 102 a, which draw asense current from word lines 106 a and 106 b and throughmagneto-resistive bits 112 a and 112 b. Preferably, the select-1terminal 130 is only asserted to a level that allows the switchtransistors in the magneto-resistive memory element 102 a to operate inthe saturation region to limit the magnitude of the sense currentsprovided. As described above, the combination of the word line currentsand the sense line currents causes the magneto-resistive bits 112 a and112 b to be written into opposite magneto-resistive states, and in theillustrative embodiment, into a state that corresponds to a logic “1”.To complete the illustrative write operation, the write current-1terminals 114, write-1 terminal 200 and the select-1 terminal 130 aredeselected.

Region 182 shows a write operation that writes a “0” tomagneto-resistive memory element 102 b. For this write operation, thewrite current-1 terminals 114 are again asserted, but now provide anegative write current pulse 216 to word lines 106 a and 106 b. Thewrite-1 terminal 200 is also asserted as shown at 218, which closes theword line switch 108 a and connects word lines 106 a and 106 b as shown.The word line current provided to write current-1 terminals 114 thuspasses down word line 106 b, through word line switch 108 a, and up wordline 106 a. To select magneto-resistive memory element 102 b, theselect-2 terminal 204 is asserted as shown at 220. This turns on theswitch transistors in magneto-resistive memory element 102 b, whichdraws a sense current from word lines 106 a and 106 b and through thecorresponding magneto-resistive bits. Preferably, the select-2 terminal204 is only asserted to a level that allows the switch transistors inthe magneto-resistive memory element 102 b to operate in the saturationregion to limit the magnitude of the sense currents provided. Asdescribed above, the combination of the word line currents and the senseline currents causes the magneto-resistive bits to be written intoopposite magneto-resistive states, and in the illustrative embodiment,into a state that corresponds to a logic “0”. To complete theillustrative write operation, the write current-1 terminals 114, write-1terminal 200 and the select-2 terminal 204 are deselected.

Region 184 shows a write operation that writes a “1” tomagneto-resistive memory element 102 d. For this write operation, thewrite current-N terminals 116 are asserted to provide a positive writecurrent pulse 222 to word lines 106 c and 106 d. The write-N terminal202 is also asserted as shown at 224, which closes the word line switch108 b and connects word lines 106 c and 106 d as shown. The word linecurrent provided to write current-N terminals 116 thus passes down wordline 106 c, through word line switch 108 b, and up word line 106 d. Toselect magneto-resistive memory element 102 d, the select-1 terminal 130is asserted as shown at 226. This turns on the switch transistors inmagneto-resistive memory element 102 d, which draw a sense current fromword lines 106 c and 106 d and through the correspondingmagneto-resistive bits. Preferably, the select-1 terminal 130 is onlyasserted to a level that allows the switch transistors in themagneto-resistive memory element 102 d to operate in the saturationregion to limit the magnitude of the sense currents provided. Asdescribed above, the combination of the word line currents and the senseline currents causes the magneto-resistive bits to be written intoopposite magneto-resistive states, and in the illustrative embodiment,into a state that corresponds to a logic “1”. To complete theillustrative write operation, the write current-N terminals 116, write-Nterminal 202 and the select-1 terminal 130 are deselected.

Region 186 shows a write operation that writes a “0” tomagneto-resistive memory element 102 e. For this write operation, thewrite current-N terminals 116 are again asserted, but now provide anegative write current pulse 228 to word lines 106 c and 106 d. Thewrite-N terminal 202 is also asserted as shown at 230, which closes theword line switch 108 b and connects word lines 106 c and 106 d as shown.The word line current provided to write current-N terminals 116 thuspasses down word line 106 d, through word line switch 108 b, and up wordline 106 c. To select magneto-resistive memory element 102 e, theselect-2 terminal 204 is asserted as shown at 232. This turns on theswitch transistors in magneto-resistive memory element 102 e, whichdraws a sense current from word lines 106 c and 106 d and through thecorresponding magneto-resistive bits. Preferably, the select-2 terminal204 is only asserted to a level that allows the switch transistors inthe magneto-resistive memory element 102 e to operate in the saturationregion to limit the magnitude of the sense currents provided. Asdescribed above, the combination of the word line currents and the senseline currents causes the magneto-resistive bits to be written intoopposite magneto-resistive states, and in the illustrative embodiment,into a state that corresponds to a logic “0”. To complete theillustrative write operation, the write current-N terminals 116, write-Nterminal 202 and the select-2 terminal 204 are deselected.

Region 188 shows a read operation for reading magneto-resistive memoryelement 102 a. During the illustrative read operation, the load-1terminal 120 is activated as shown at 234. Activating the load-1terminal 120 causes the load transistor 144 to connect the inputs of thefirst inverter 140 and the second inverter 142. Because the firstinverter 140 and second inverter 142 are in a cross-coupledconfiguration, this causes the first inverter 140 and second inverter142 to go into an intermediate state, and in particular, into a statewhere both the n-channel and p-channel transistors are at leastpartially on. Because both the n-channel and p-channel transistors areat least partially on, a sense line current path is provided to each ofthe first and second word lines 106 a and 106 b. The resistance of eachsense line current path is preferably substantially identical so thatthe sense line current provided to the first word line 106 a and thesense line current provided to the second word line 106 b aresubstantially identical. The write-1 terminal 200 remains off, therebyeffectively disconnecting word line 106 a from word line 106 b.

To select magneto-resistive memory element 102 a, the select-1 terminal130 is activated as shown at 236. This turns on the switch transistorsin magneto-resistive memory element 102 a, which draws the read sensecurrents from word lines 106 a and 106 b through magneto-resistive bits112 a and 112 b, respectively. To reduce the resistance that is inseries with the magneto-resistive bits 112 a and 112 b, the select-1terminal 130 is preferably activated at a level that allows the switchtransistors in the magneto-resistive memory element 102 a to operate inthe linear region, and preferably fully turned on. This may helpincrease the sensitivity of the read operation by minimizing theresistance of the switch transistors.

Because the magneto-resistive bits 112 a and 112 b are in oppositeresistive states, the sense line currents that pass through the firstand second magneto-resistive bits produce different voltages at thefirst and second word lines 106 a and 106 b. This voltage differentialis provided to the negative supply terminals 146 and 148 of the firstand second inverters 140 and 142 via word lines 106 a and 106 b,respectively. Thereafter, the load-1 terminal 120 is released. Releasingthe load-1 terminal 120 causes the cross-coupled inverter pair 140 and142 to assume the data state that corresponds to the voltagedifferential that is present at the negative supply terminals 146 and148. This state is stored by the cross-coupled inverter pair andprovided to the out1-1 terminal 206 as shown at 238.

Finally, region 190 shows a read operation that reads magneto-resistivememory element 102 b. During this illustrative read operation, theload-1 terminal 120 is again activated as shown at 240. Activating theload-1 terminal 120 causes the load transistor 144 to connect the inputsof the first inverter 140 and the second inverter 142. Because the firstinverter 140 and second inverter 142 are in a cross-coupledconfiguration, this causes the first inverter 140 and second inverter142 to go into an intermediate state, and in particular, into a statewhere both the n-channel and p-channel transistors are at leastpartially on. Because both the n-channel and p-channel transistors areat least partially on, a sense line current path is provided to each ofthe first and second word lines 106 a and 106 b. The resistance of eachsense line current path is preferably substantially identical so thatthe sense line current provided to the first word line 106 a and thesense line current provided to the second word line 106 b aresubstantially identical. The write-1 terminal 200 remains off, therebyeffectively disconnecting word line 106 a from word line 106 b.

To select magneto-resistive memory element 102 b, the select-2 terminal204 is activated as shown at 242. This turns on the switch transistorsin magneto-resistive memory element 102 b, which draws the read sensecurrents from word lines 106 a and 106 b through the correspondingmagneto-resistive bits. To reduce the resistance that is in series withthe magneto-resistive bits, the select-2 terminal 204 is preferablyactivated at a level that allows the switch transistors in themagneto-resistive memory element 102 b to operate in the linear region,and preferably fully turned on. This may help increase the sensitivityof the read operation by minimizing the resistance of the switchtransistors.

Because the magneto-resistive bits are in opposite resistive states, thesense line currents that pass through the first and secondmagneto-resistive bits produce different voltages at the first andsecond word lines 106 a and 106 b. This voltage differential is providedto the negative supply terminals 146 and 148 of the first and secondinverters 140 and 142 via word lines 106 a and 106 b, respectively.Thereafter, the load-1 terminal 120 is released. Releasing the load-1terminal 120 causes the cross-coupled inverter pair 140 and 142 toassume the data state that corresponds to the voltage differential thatis present at the negative supply terminals 146 and 148. This state isstored by the cross-coupled inverter pair and provided to the out1-1terminal 206 as shown at 244.

FIG. 6 is a partial cross-sectional side view of the magneto-resistivememory element 102 f of FIG. 4 taken along line 6—6. Themagneto-resistive memory element is generally shown at 120 f, andincludes a magneto-resistive bit 260, a magneto-resistive bit 262 andswitch block 268.

The switch block 268 preferably includes a first transistor 270 and asecond transistor 272. The first and second transistors 270 and 272 arepreferably fabricated into the under-layers of an integrated circuit,and adjacent the location of corresponding magneto-resistive bits 260and 262. The gates of the first transistor 270 and a second transistor272 are preferably coupled to a buffer or the like (not shown), which isalso fabricated into the under-layers of the integrated circuit. Thegates of the first and second transistors 270 and 272 are preferablycoupled to the buffer via a metal interconnect line, a poly-siliconline, or a combination thereof.

A first insulating layer is then preferably provided over the first andsecond transistors 270 and 272. A metal layer may then be provided overthe first insulating layer and selectively etched to form word lines 106c and 106 d. A second insulating layer may then be provided over wordlines 106 c and 106 d. Via holes may then be cut through the secondinsulating layer down to the word lines 106 c and 106 d.

The top surface of the second insulting layer is preferably planarizedusing a Chemical-Mechanical-Polishing (CMP) step. Once planarized,magneto-resistive bits 260 and 262 are provided. Magneto-resistive bits260 and 262 preferably have a lower ferromagnetic thin film, an upperferromagnetic thin film, and a thin non-ferromagnetic layertherebetween. One purpose of the thin non-ferromagnetic layer is tode-couple the magnetization vectors of the lower and upper ferromagneticlayers. The thin non-ferromagnetic layer may be, for example, copper.The upper and lower ferromagnetic thin film layers preferably exhibituni-axial anisotropy, magneto-resistance, little magneto-striction, andare of an alloy composition that includes nickel, cobalt and iron. Themagnetic device structure can be a spin valve that includes a pinnedreference layer spaced apart from a free layer that stores the digitalinformation. The lower ferromagnetic thin film is typically, but notalways, thicker than the upper ferromagnetic thin film. Alternatively, apseudo-spin valve structure can be used, where the lower ferromagneticthin film is often called the hard layer, and the upper ferromagneticthin film is often called the soft layer. For the memory shown in FIG.4, the magnetization vector of the pinned layer preferably remainspointing in a single direction such as to the left during both read andwrite operations.

Once formed, the magneto-resistive bits 260 and 262 are preferablycovered with a third insulating layer. The third insulating layer may beselectively removed to expose the bit ends of magneto-resistive bits 260and 262. Yet another metal layer may then be used to connect one end ofmagneto-resistive bits 260 and 262 to the word lines 106 c and 106 d,respectively, preferably using one or more of the previously formed viaholes, such as via hole or contact structure 266. The same metal layermay also be used to connect the other ends of magneto-resistive bits 260and 262 to the drain terminals of transistors 270 and 272, respectively.

As can readily be seen, a word line is provided adjacent each of themagneto-resistive bits 260 and 262. One end of each of themagneto-resistive bits 260 and 262 is connected to the correspondingword line 106 c and 106 d, and the other end is connected to apredetermined voltage such as ground through switch block 268. Theswitch block 268 selectively provides a path for a sense current to flowfrom the word lines 106 c and 106 d through magneto-resistive bits 260and 262 and to ground. Accordingly, word line 106 c delivers the wordline current and the sense line current for magneto-resistive bit 260,and the word line 106 d delivers the word line current and the senseline current for magneto-resistive bit 262.

FIG. 7 is a partial cross-sectional side view of yet anotherillustrative magneto-resistive memory element in accordance with thepresent invention. This illustrative embodiment is similar to that shownand described above with respect to FIG. 6. However, the word lines 106c and 106 d are positioned above the magneto-resistive bits 260 and 262,rather than below.

Having thus described the preferred embodiments of the presentinvention, those of skill in the art will readily appreciate that theteachings found herein may be applied to yet other embodiments withinthe scope of the claims hereto attached.

What is claimed is:
 1. A method for writing a magneto-resistive bit, themethod comprising the steps of: supplying a word line current adjacentthe magneto-resistive bit; and drawing a sense current from the wordline current through at least part of the magneto-resistive bit.
 2. Amethod according to claim 1, wherein the magneto-resistive bit has aword line extending adjacent thereto, and wherein the word line currentproduces a word line magnetic field component that extends in a firstdirection relative to the magneto-resistive bit.
 3. A method accordingto claim 2, wherein the sense current produces a sense line magneticfield component that extends in a second direction relative to themagneto-resistive bit, wherein the first direction is orthogonal to thesecond direction.
 4. A method according to claim 3, wherein the drawingstep draws a sufficient sense current to write the magneto-resistivebit.
 5. A method for operating a magneto-resistive storage device, themagneto-resistive storage device having a magneto-resistive bit with afirst end and a second end, a word line extending adjacent themagneto-resistive bit with the word line connected to the first end ofthe magneto-resistive bit, and a reading circuit coupled to the wordline for providing a path for a read sense current to flow to the wordline and for sensing the resistive state of the magneto-resistive bitvia the read sense current, the method comprising the steps of:preventing the read circuit from providing a path for the read sensecurrent to flow to the word line; supplying a word line current to theword line; and drawing a write sense current from the word line currentthrough at least part of the magneto-resistive bit.
 6. A methodaccording to claim 5, further comprising the steps of: preventing theword line current from being supplied to the word line; allowing theread circuit to provide a path for the read sense current to flow to theword line; drawing a read sense current from the word line through atleast part of the magneto-resistive bit; and sensing the resistive stateof the magneto-resistive bit using the read sense current.
 7. A methodaccording to claim 6, further comprising the step of storing theresistive state of the magneto-resistive bit in a storage element.